Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor
Abstract
The linear shift in VDirac of a flexible GFET, caused by the flexoelectric effect of a PLZT gate, makes it enormously useful for both tuning the graphene doping state and detecting bending curvature.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2019
- Source ID
- 10.1039/c8mh01499j
Entities
People
- Chun-lin Jia
- Chunrui Ma
- Guangliang Hu
- Jingying Wu
- Judy Z. Wu
- Ming Liu
- Weihua Liu
- Zhongshuai Liang
Organizations
- Army Research Office
- China Postdoctoral Science Foundation
- Lawrence University
- National Natural Science Foundation of China
- National Science Foundation
- State Key Laboratory for Mechanical Behavior of Materials
- United States Army
- University of Kansas
- Xi'an Jiaotong University