Silicon compatible Sn-based resistive switching memory
Abstract
Comprehensive criterion for electrode metal selection applicable to cationic filamentary devices enables a CMOS compatible Sn-based resistive switching memory.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2018
- Source ID
- 10.1039/c8nr01540f
Entities
People
- Bhaswar Chakrabarti
- Daniel Rosenmann
- Jianqiang Lin
- Kai Ni
- Kiran Sasikumar
- Leonidas E. Ocola
- Liliana Stan
- Pabitra Choudhury
- Ralu Divan
- Subramanian K R S Sankaranarayanan
- Suman Datta
- Supratik Guha
- Sushant Sonde
- Yuzi Liu
Organizations
- Argonne National Laboratory
- Center for Nanoscale Materials
- Defense Advanced Research Projects Agency
- National Science Foundation
- New Mexico Institute of Mining and Technology
- Pritzker School of Molecular Engineering
- United States Army
- United States Department of Energy
- University of Notre Dame