Pulsed-light surface annealing for low contact resistance interfaces between metal electrodes and bismuth telluride thermoelectric materials

Abstract

The pulsed light annealing process improves the efficiency of bismuth telluride based thermoelectric devices by reducing the contact resistance significantly.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2019
Source ID
10.1039/c8tc03147a

Entities

People

  • Dan Mitchell
  • Giri Joshi
  • James D. Austin
  • Josh Ruedin
  • Kyle Hoover
  • Leslie Wood
  • Mike Mcaleer
  • Rey Guzman
  • Steve Savoy

Organizations

  • Jet Propulsion Laboratory
  • United States Army
  • United States Navy

Tags

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology