Radiation damage effects in Ga2O3 materials and devices
Abstract
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2019
- Source ID
- 10.1039/c8tc04193h
Entities
People
- A. Y. Polyakov
- Chaker Fares
- Fan Ren
- Jiancheng Yang
- Jihyun Kim
- Stephen Pearton
- Suhyun Kim
Organizations
- Defense Threat Reduction Agency
- Korea University
- Ministry of Education and Science of the Russian Federation
- National Research Foundation of Korea
- National University of Science and Technology, Zimbabwe
- United States Army
- University of Florida