Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics
Abstract
We demonstrate a method for controlled p-doping of the halide perovskite surface using molecular dopants, resulting in reduced non-radiative recombination losses and improved device performance.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2019
- Source ID
- 10.1039/c9ee01773a
Entities
People
- Alba Pellaroque
- Antoine Kahn
- Barry P Rand
- Bernard Wenger
- Craig B Arnold
- Federico Pulvirenti
- Fengyu Zhang
- Henry Snaith
- Johannes Leisen
- Nakita K. Noel
- Obadiah G Reid
- Seth Marder
- Severin N. Habisreutinger
- Stephen Barlow
- Yadong Zhang
- Yen-Hung Lin
Organizations
- Air Force Office of Scientific Research
- Clarendon Laboratory
- Georgia Institute of Technology College of Sciences
- Georgia Tech
- Marie Skłodowska-Curie Actions
- National Renewable Energy Laboratory
- National Science Foundation
- Office of Basic Energy Sciences
- Office of Naval Research
- Princeton University
- Renewable and Sustainable Energy Institute
- United States Army
- United States Department of Energy
- University of Colorado Boulder
- University of Oxford