Will surface effects dominate in quasi-two-dimensional gallium oxide for electronic and photonic devices?
Abstract
The ultra-wide band gap semiconductor Ga2O3 has advantages for power electronics applications in the automotive industry, data center power management and industrial systems but attention must be paid to its surface sensitivity to the environment.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2019
- Source ID
- 10.1039/c9nh00273a
Entities
People
- F. Ren
- Jihyun Kim
- Stephen Pearton
Organizations
- Defense Threat Reduction Agency
- Korea Institute of Energy Technology Evaluation and Planning
- Korea University
- National Science Foundation
- United States Army
- University of Florida