Structural and electrical characterization of monolithic core–double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy

Abstract

We have studied the epitaxy and structural characterization of monolithic n-GaN/Al/p-AlGaN nanowire heterostructures.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2019
Source ID
10.1039/c9nr00081j

Entities

People

  • S. Zhao
  • Sharif Sadaf
  • T. Szkopek
  • Y.-h. Ra
  • Z. Mi

Organizations

  • Army Research Office
  • McGill University
  • National Research Council Canada
  • Natural Sciences and Engineering Research Council

Tags

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology