Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

Abstract

We demonstrate that the charge-density-wave devices with quasi-two-dimensional 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 1014 H+cm−2.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2019
Source ID
10.1039/c9nr01614g

Entities

People

  • A. Fedoseyev
  • Adane Geremew
  • Alexander A. Balandin
  • Daniel M. Fleetwood
  • Ece Aytan
  • En Xia Zhang
  • Fariborz Kargar
  • Matthew A. Bloodgood
  • Sergey Rumyantsev
  • Simeng Zhao
  • T. T. Salguero

Organizations

  • Air Force Office of Scientific Research
  • European Regional Development Fund
  • National Science Foundation
  • United States Army
  • University of California
  • University of Georgia
  • Vanderbilt University
  • Yusuf Hamied Department of Chemistry

Tags

Fields of Study

  • Physics

Technology Areas

  • Microelectronics