Interface modification of sputtered NiOx as the hole-transporting layer for efficient inverted planar perovskite solar cells
Abstract
An appropriately combined triple interface modification, i.e., post-annealing, O2-plasma, and KCl treatments, is employed to ameliorate the optoelectronic properties of sputtered NiOx films and achieve better device performance.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2020
- Source ID
- 10.1039/c9tc05759e
Entities
People
- Chen Tao
- Chongwen Li
- Cong Chen
- Guojia Fang
- Hongwei Lei
- Niraj Shrestha
- Pengbin Gui
- Randy J Ellingson
- Rasha A Awni
- Sandip Singh Bista
- Xiaolu Zheng
- Xinxing Yin
- Yanfa Yan
- Zhaoning Song
- Zhiliang Chen
Organizations
- Air Force Research Laboratory
- China Scholarship Council
- Department of Science and Technology
- Huazhong Agricultural University
- National Natural Science Foundation of China
- United States Army
- University of Toledo
- Wuhan University