Sc3N@C80 and La@C82 doped graphene for a new class of optoelectronic devices

Abstract

Hybrid graphene photodetectors (PDs) with endohedral Sc3N@C80 and La@C82 were used by the Kaul Research Group at the University of North Texas to dope graphene p-type and n-type, respectively, that resulted in significant optoelectronic property enhancement of the PDs.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2020
Source ID
10.1039/c9tc06145b

Entities

People

  • Anupama Kaul
  • Kishan Jayanand
  • Luis Echegoyen
  • Misook Min
  • Nirmal Adhikari
  • Srishti Chugh

Organizations

  • Air Force Office of Scientific Research
  • Army Research Office
  • National Science Foundation
  • PACCAR
  • Robert A. Welch Foundation
  • United States Army
  • University of North Texas
  • University of Texas at El Paso
  • Yusuf Hamied Department of Chemistry

Tags

Readers

  • Astronomy/Astrophysics
  • Nanocomposite Materials Science
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene