Substrate dependent resistive switching in amorphous-HfOx memristors: an experimental and computational investigation
Abstract
Long-range thermal environment makes significant impact on resistive switching in amorphous-HfOx (x ∼ 1.8) memristors; and the substrate of low thermal conductivity improved both the digital and analog switching performance.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2020
- Source ID
- 10.1039/c9tc06736a
Entities
People
- Christopher J Perini
- Darshan G. Pahinkar
- Eric M Vogel
- Matthew P. West
- Pradip Basnet
- Samuel Graham
Organizations
- Air Force Office of Scientific Research
- Georgia Tech
- National Science Foundation
- School of Materials, University of Manchester
- United States Army