Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure

Abstract

(a) Cross-sectional TEM micrograph of 14 period InAs/GaSb SL, demonstrating abrupt interfaces; and (b) Shubnikov-de Haas oscillations testifying high mobility.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2020
Source ID
10.1039/d0ma00046a

Entities

People

  • Christopher J. Stanton
  • Dmitriy Smirnov
  • G. D. Sanders
  • Jean J Heremans
  • Jiang Zhu
  • Mantu K Hudait
  • Michael Clavel
  • Patrick S. Goley
  • Yuanchang Xie
  • Yuxuan Jiang

Organizations

  • Air Force Office of Scientific Research
  • Division of Electrical, Communications & Cyber Systems
  • Division of Materials Research
  • Georgia Tech
  • National High Magnetic Field Laboratory
  • United States Army
  • United States Department of Energy
  • University of Florida
  • Virginia Tech

Tags

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.