Two-dimensional Dirac spin-gapless semiconductors with tunable perpendicular magnetic anisotropy and a robust quantum anomalous Hall effect

Abstract

A 2D ferromagnetic Fe2I2 layer with a robust QAH effect towards the low-power switching of PMA in multiferroic Fe2I2/BaTiO3 bilayers.

Document Details

• Document Type: Pub Defense Publication
• Publication Date: Jan 01, 2020
• Source ID: 10.1039/d0mh00396d

Entities

People

• Nicholas Kioussis
• Qilong Sun
• Yandong Ma

Organizations

• California State University
• National Science Foundation
• Shandong University
• United States Army

Tags

Fields of Study

• Physics

Readers

• Materials Science and Engineering.
• Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

• Microelectronics
• Microelectronics - Graphene
• Quantum Computing