Integration of highly anisotropic multiferroic BaTiO3–Fe nanocomposite thin films on Si towards device applications
Abstract
Integration of highly anisotropic multiferroic thin films on silicon substrates is a critical step towards low-cost devices, especially high-speed and low-power consumption memories.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2020
- Source ID
- 10.1039/d0na00405g
Entities
People
- Bruce Zhang
- Haiyan Wang
- Han Wang
- Matias Kalaswad
- Xingyao Gao
- Xuejing Wang
Organizations
- National Science Foundation
- Office of Naval Research
- Purdue University
- School of Materials, University of Manchester
- United States Army