Directly measuring the structural transition pathways of strain-engineered VO2 thin films

Abstract

The interplay between epitaxial strains and structural transition pathways as well as local environment along the metal-to-insulator transition in VO2/MgF2 (001) and (110) thin films is investigated.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2020
Source ID
10.1039/d0nr04776g

Entities

People

  • Christopher N Singh
  • Darrell G. Schlom
  • David J. Gosztola
  • Egor Evlyukhin
  • Galo J Paez
  • Hanjong Paik
  • Louis Piper
  • Sebastian A Howard
  • Wei-Cheng Lee

Organizations

  • Air Force Office of Scientific Research
  • Argonne National Laboratory
  • Binghamton University
  • Center for Nanoscale Materials
  • Cornell University
  • National Science Foundation
  • Secretariat of Higher Education, Science, Technology and Innovation
  • United States Army
  • United States Department of Energy

Tags

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene