Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

Abstract

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2020
Source ID
10.1039/d0ra05209d

Entities

People

  • Deji Akinwande
  • Jack C. Lee
  • James D. Austin
  • Ruijing Ge
  • Xiaohan Wu
  • Yifu Huang

Organizations

  • Army Research Office
  • National Science Foundation
  • United States Army
  • University of Texas at Austin

Tags

Fields of Study

  • Materials science

Readers

  • Computational Fluid Dynamics (CFD)
  • Integrated Circuit Design and Technology.
  • Plasma Physics.