The synthesis of competing phase GeSe and GeSe2 2D layered materials
Abstract
We report the synthesis of layered anisotropic semiconductor GeSe and GeSe2 nanomaterials through low temperature and atmospheric pressure chemical vapor deposition using halide based precursors. The crystal phase is controlled by simply changing selenium vapor pressure.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2020
- Source ID
- 10.1039/d0ra07539f
Entities
People
- Cassondra Brayfield
- Debarati Hajra
- Hui Cai
- Kentaro Yumigeta
- Mark Blei
- Sefaattin Tongay
- Sijie Yang
- Yuxia Shen
Organizations
- Arizona State University
- Army Research Office
- Division of Civil, Mechanical & Manufacturing Innovation
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- United States Army
- United States Department of Energy