Pulsed heating atomic layer deposition (PH-ALD) for epitaxial growth of zinc oxide thin films on c-plane sapphire
Abstract
High-temperature heat pulses interleaved with ALD cycling enables the growth of heteroepitaxial ZnO on c-plane sapphire substrates. This “pulsed-heating” ALD separates the chemistry delivery process from the material’s structural crystallization.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2022
- Source ID
- 10.1039/d1dt03581a
Entities
People
- Brandon D Piercy
- Jamie P. Wooding
- Mark D Losego
- Shawn Alan Gregory
Organizations
- Georgia Tech
- Link Foundation
- National Science Foundation