Semiconducting α′-boron sheet with high mobility and low all-boron contact resistance: a first-principles study
Abstract
Design of fully boron-sheet-based FETs in the real 2D atomically-thin limit.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2021
- Source ID
- 10.1039/d1nr00329a
Entities
People
- Boris I Yakobson
- Ji-Hui Yang
- Jun-Jie Zhang
- Tariq Altalhi
Organizations
- Office of Naval Research
- Rice University
- Taif University
- United States Army
- Yusuf Hamied Department of Chemistry