Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors
Abstract
Using first-principles calculations, we investigate six transition-metal nitride halides as potential vdW dielectrics for transition metal dichalcogenide channel transistors. We identify the best combinations for the p-MOS transistor technology.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2022
- Source ID
- 10.1039/d1nr05250k
Entities
People
- Akash Laturia
- Ali Saadat
- Maarten L Van de Put
- Mehrdad Rostami Osanloo
- William G Vandenberghe
Organizations
- Semiconductor Research Corporation
- United States Department of Defense
- University of Texas at Dallas