Spin defects in hexagonal boron nitride for strain sensing on nanopillar arrays
Abstract
Successful integration of spin defects in hBN on SiO2 nanopillars, which leads to enhanced PL and better ODMR contrast. Also, the spin defects provide useful information about the strain fields associated with the hBN at the nanopillar sites.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2022
- Source ID
- 10.1039/d1nr07919k
Entities
People
- Andreas Gottscholl
- Chi Li
- Igor Aharonovich
- John D. Scott
- Mehran Kianinia
- Milos Toth
- Noah Mendelson
- Tieshan Yang
- Vladimir Dyakonov
Organizations
- Australian Research Council
- Office of Naval Research Global
- University of Technology Sydney
- University of Würzburg