Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor
Abstract
The paper presents a thorough investigation of photoconductive properties of few layers of rhenium diselenide (ReSe2). A correlation between responsivity (R) and power exponent (γ) indicates localized trap states plays a crucial role in photocurrent generation, commonly known as photogating. These trap states can be modulated by external factors such as temperature and gate voltage.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2021
- Source ID
- 10.1039/d1tc01973b
Entities
People
- Anirudha V Sumant
- Bhaswar Chakrabarti
- Daniel Rhodes
- Daniel Rosenmann
- Jawnaye A. Nash
- Kiran Kumar Kovi
- Lincoln Weber
- Luis Balicas
- Milinda Wasala
- Nihar R Pradhan
- Prasanna D Patil
- Ralu Divan
- Rana Alkhaldi
- Saikat Talapatra
Organizations
- Argonne National Laboratory
- Jackson State University
- National High Magnetic Field Laboratory
- National Science Foundation
- Southern Illinois University
- Southern Illinois University Carbondale
- United States Army Research Institute of Environmental Medicine
- United States Department of Energy
- University of Chicago