Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfOx RRAM
Abstract
Optimum Ti doping provides a trade-off between the forming voltage and the switching window. A physical explanation of the observed forming and resistive switching characteristics has been provided.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2022
- Source ID
- 10.1039/d1tc04734e
Entities
People
- Eric M Vogel
- Fabia Farlin Athena
- Jinho Hah
- Matthew P. West
- Riley Hanus
- Samuel Graham
Organizations
- Air Force Office of Scientific Research
- Georgia Tech
- National Science Foundation