Magnetoresistance of high mobility HgTe quantum dot films with controlled charging

Abstract

The magnetoresistance of HgTe quantum dot films, exhibiting a well-defined 1Se state charging and a relatively high mobility (1ā€“10 cm2 Vāˆ’1 sāˆ’1), is measured with controlled occupation of the first electronic state.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2022
Source ID
10.1039/d1tc05202k

Entities

People

  • Dmitri V. Talapin
  • Guohua Shen
  • Margaret H. Hudson
  • Menglu Chen
  • Peter B. Littlewood
  • Philippe Guyot-Sionnest
  • Xinzheng Lan

Organizations

  • Beijing Institute of Technology
  • National Natural Science Foundation of China
  • National Science Foundation
  • United States Department of Defense
  • University of Chicago

Tags

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots