The effect of electron–phonon and electron-impurity scattering on the electronic transport properties of silicon/germanium superlattices

Abstract

Lattice strain environment of superlattices causes shift of electronic bands and electron relaxation times modulated electronic transport properties.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2022
Source ID
10.1039/d1tc05878a

Entities

People

  • Manoj Settipalli
  • Sanghamitra Neogi
  • Vitaly S. Proshchenko

Organizations

  • Air Force Research Laboratory
  • Colorado State University
  • Defense Advanced Research Projects Agency
  • National Science Foundation
  • United States Department of Defense
  • University of Colorado Boulder

Tags

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene