Electron–phonon relaxation at the Au/WSe2 interface is significantly accelerated by a Ti adhesion layer: time-domain ab initio analysis

Abstract

On introduction of a thin Ti adhesion layer at the Au/WSe2 interface, the electron–phonon coupling strengthens which results in accelerated excited charge carrier relaxation.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2022
Source ID
10.1039/d2nr00728b

Entities

People

  • John A Tomko
  • Marina V Tokina
  • Oleg V Prezhdo
  • Patrick E Hopkins
  • Shriya Gumber
  • Teng-Fei Lu

Organizations

  • Dalian Jiaotong University
  • Semiconductor Research Corporation
  • United States Department of Defense
  • University of Southern California
  • University of Virginia

Tags

Fields of Study

  • Physics

Readers

  • Economics
  • Molecular Photonics/Laser Physics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene