Post-annealing optimization of the heteroepitaxial La-doped SrSnO3 integrated on silicon via ALD
Abstract
This study demonstrated the successful epitaxy of La-SrSnO3/BaTiO3 on SrTiO3-buffered Si (001) with ALD-deposited La-SrSnO3 and explored the optimization of post-annealing to enhance the capacitance properties of heterostructure.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2023
- Source ID
- 10.1039/d2nr06861c
Entities
People
- Bojia Chen
- David W. Zhang
- Hao Zhu
- Jack C. Lee
- Ji Li
- Jiyuan Zhu
- John G Ekerdt
- Lin Chen
- Pei-yu Chen
- Qingqing Sun
- Rongxu Bai
- Shen Hu
- Yu Zhang
Organizations
- Air Force Office of Scientific Research
- Fudan University
- National Natural Science Foundation of China
- University of Texas at Austin