Domain state exchange bias in a single layer FeRh thin film formed via low energy ion implantation
Abstract
Low-energy ion implantation is used to form a single-layer exchanged biased FeRh film. Neutron scattering measurements confirm the presence of pinned uncompensated moments and magnetic domains consistent with a domain state exchange bias system.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2023
- Source ID
- 10.1039/d2tc04014j
Entities
People
- Artur Glavic
- Cory D. Cress
- Joseph C Prestigiacomo
- Olaf van 't Erve
- Samuel W LaGasse
- Steven P. Bennett
- Valeria Lauter
Organizations
- Oak Ridge National Laboratory
- Paul Scherrer Institute
- United States Naval Research Laboratory