Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga2O3
Abstract
Vertical heterojunctions based on 3D wide band-gap semiconductor, β-phase Ga2O3 and 2D layered semiconductors are demonstrated. Effects of 2D semiconductor, contact metals and β-Ga2O3 crystalline orientation on junction performance are investigated.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2023
- Source ID
- 10.1039/d3nr01987j
Entities
People
- Albert V Davydov
- Chloe Leblanc
- Deep Jariwala
- Dinusha Herath Mudiyanselage
- Houqiang Fu
- Huairuo Zhang
- Seunguk Song
Organizations
- Air Force Office of Scientific Research
- Arizona State University
- National Institute of Standards and Technology
- National Research Foundation of Korea
- National Science Foundation
- University of Pennsylvania