Superior high temperature performance of 8 kV NiO/Ga2O3vertical heterojunction rectifiers
Abstract
NiO/Ga2O3heterojunction rectifiers were measured over a temperature range up to 600 K and found to exhibit a near-temperature independent breakdown voltage of >7 kV, far in excess of previous Schottky rectifier results.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2023
- Source ID
- 10.1039/d3tc01200j
Entities
People
- Chao-Ching Chiang
- Fan Ren
- Hsiao-Hsuan Wan
- Jian-Sian Li
- Stephen Pearton
- Xinyi Xia
Organizations
- Defense Threat Reduction Agency
- National Science Foundation
- University of Florida