Proton bombardment and isochronal annealing of p-type Pb0.76Sn0.24Te
Abstract
The effects of low-energy proton bombardment (200–450 keV) on the electrical properties of p-type Pb0.76Sn0.24Te have been investigated. The carrier concentrations were generally found to be reduced by the bombardment. Carrier conduction from p to n type, which depended upon the initial carrier concentrations, was also observed. Samples with an initial hole concentration in the range of low 1017 holes/cm3 were changed to n type after a proton dose of approximately 5 × 1013 protons/cm2. Type conversion was not consistent for samples with higher initial carrier concentrations. Mobilities were found to increase for type-converted samples. A slight decrease was observed for samples which did not change their type. Isochronal annealing was performed for type-converted samples. A major annealing stage was found to occur in the temperature range 90–140°C in which the converted samples changed their conduction back to p type. This seems to limit the applicability of proton bombardment as a process to produce reliable devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 01, 1974
- Source ID
- 10.1063/1.1663901
Entities
People
- C. C. Wang
- J. W. Sunier
- T. F. Tao
Organizations
- Naval Postgraduate School
- University of California