Characterization of ion-implanted GaAs using cathodoluminescence
Abstract
Cathodoluminescence is investigated as a method for determining the depth profiles of ion-implanted layers in GaAs. A computer simulation of the cathodoluminescence process is developed and used to study the sensitivity of the luminescence to changes in implant profile and electron beam energy. The results obtained for both uniformly doped layers and ion-implanted layers are then compared to experimental results from Mg-implanted GaAs. Clear differences are found to exist between the predicted luminescence curves for different types of layers suggesting that cathodoluminescence is a potentially useful diagnostic tool for use in profile determination.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 1983
- Source ID
- 10.1063/1.331910
Entities
People
- M. L. Cone
- R. L. Hengehold
Organizations
- Air Force Institute of Technology