Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition
Abstract
Low-temperature photoluminescence (PL) spectroscopy has been used to characterize as-grown and ion-implanted 3C-SiC films grown by chemical vapor deposition on Si(100) substrates. The D1 and D2 defect PL bands reported previously in ion-implanted Lely-grown SiC were also observed in the as-grown chemical vapor deposited films, and the effects of annealing (1300–1800 °C) on these PL bands as observed in as-grown films and films implanted with B, Al, or P have been studied. As reported previously for Lely-grown SiC, the spectral details of the defect PL bands and their annealing characteristics were found to be independent of the particular implanted-ion species.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 1987
- Source ID
- 10.1063/1.337997
Entities
People
- J. A. Edmond
- J. A. Freitas Jr.
- Jee-Hwan Ryu
- Robert F Davis
- S. G. Bishop
Organizations
- North Carolina State University
- United States Naval Research Laboratory