Nonlinear large signal admittance in n-GaAs diodes at terahertz frequencies based upon transport analysis
Abstract
Previous simulations of the transport in a n-GaAs n+nn+ diode structure using both moments of the Boltzmann equation and a Monte Carlo particle-field self-consistent approach suggest that submillimeter-wave generation may be possible only at cryogenic temperatures. These simulations employed only modest ac signal levels compared to the dc value. Here the terminal admittance behavior is examined for truly large signal levels, up to 100% of the dc value. It seems that such large signal conditions suppress the appearance of negative conductance in the submicron diode.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 15, 1988
- Source ID
- 10.1063/1.341729
Entities
People
- Clifford M. Krowne
Organizations
- United States Naval Research Laboratory