Structural characterization of molecular-beam epitaxially grown Zn1−x MnxSe on GaAs(001) substrates

Abstract

Epitaxially grown single-crystal films of Zn1−xMnxSe have been characterized by x-ray diffraction techniques. Their dislocation densities have been estimated from double-crystal rocking-curve measurements. Values of the unit cell parameters normal and parallel to the substrate surface, as determined from (004) and (444) reflections, indicate that the films have some degree of tetragonal distortion for higher Mn compositions.

Document Details

• Document Type: Pub Defense Publication
• Publication Date: Oct 15, 1989
• Source ID: 10.1063/1.344070

Entities

People

• J. K. Furdyna
• N. Samarth
• S. B. Qadri

Organizations

• United States Naval Research Laboratory
• University of Notre Dame

Tags

Fields of Study

• Materials science

Readers

• Materials Science and Engineering.
• Semiconductor Device Technology
• Thin Film Deposition Science.