Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon
Abstract
The structural and electrical properties of epitaxial Pb(Zr0.2Ti0.8)O3 thin films grown on 2 in. (001) silicon wafers were investigated. Using x-ray diffraction, the lattice behavior of the heterostructure has been studied as a function of temperature, suggesting a 250 °C increase of the Pb(Zr0.2Ti0.8)O3 ferroelectric-paraelectric transition temperature with respect to the bulk value. This significant enhancement of the critical temperature is understood in terms of a two-dimensional clamping effect.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 03, 2011
- Source ID
- 10.1063/1.3532110
Entities
People
- A. Sambri
- A. Torres Pardo
- C. H. Ahn
- J. W. Reiner
- J.-m. Triscone
- O. Stéphan
- S. Gariglio
Organizations
- European Commission
- National Science Foundation
- Office of Naval Research
- Swiss National Science Foundation
- University of Geneva
- Yale University