Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films
Abstract
The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 °C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 03, 2011
- Source ID
- 10.1063/1.3536486
Entities
People
- Gulgun H. Aydogdu
- Shriram Ramanathan
- Sieu D. Ha
Organizations
- Army Research Office
- Harvard University