Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator
Abstract
Strain state of ultrathin InAs-on-insulator layers obtained from an epitaxial transfer process is studied. The as-grown InAs epilayer (10–20 nm thick) on the GaSb/AlGaSb source wafer has the expected ∼0.62% tensile strain. The strain is found to fully release during the epitaxial transfer of the InAs layer onto a Si/SiO2 substrate. In order to engineer the strain of the transferred InAs layers, a ZrOx cap was used during the transfer process to effectively preserve the strain. The work presents an important advance toward the control of materials properties of III-V on insulator layers.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 03, 2011
- Source ID
- 10.1063/1.3537963
Entities
People
- Ali Javey
- Carlo Carraro
- E. Plis
- Ha Sul Kim
- Hui Fang
- Kuniharu Takei
- Morten Madsen
- Roya Maboudian
- Sanjay Krishna
- Szu-ying Chen
- Yu-lun Chueh
Organizations
- Air Force Office of Scientific Research
- Lawrence Berkeley National Laboratory
- National Science Foundation
- National Tsing Hua University
- University of California, Berkeley
- University of New Mexico