Gain of blue and cyan InGaN laser diodes
Abstract
Experimental gain spectra of 450 and 490 nm laser diodes on c-plane GaN are analyzed by detailed comparison with the results of a fully microscopic theory. The gain calculation shows the importance of electron LO-phonon coupling. The whole spectral gain shape, not only the low energy tail, is strongly influenced by the LO-phonon contribution. The inhomogeneous broadening parameter increases by a factor of about two for the cyan laser diode in comparison with the blue laser structure. This indicates an increase in alloy and thickness fluctuations for the longer wavelength material.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 10, 2011
- Source ID
- 10.1063/1.3541785
Entities
People
- A. Gomez-iglesias
- B. Pasenow
- J. Hader
- J. Muller
- Jerome V. Moloney
- M. Sabathil
- S. Lutgen
- Stephan W. Koch
- T. Lermer
- U. Strauss
- U. T. Schwarz
- W. Scheibenzuber
Organizations
- Air Force Office of Scientific Research
- Fraunhofer Institute for Applied Solid State Physics
- OSRAM Licht AG
- University of Arizona
- University of Marburg