Optical study of an n-type modulation-doped GaAs/AlAs multiple quantum well structure
Abstract
We present an optical study (photoluminescence and Raman scattering) of a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. The photoluminescence shows that the Si donors of the barriers release their electrons in the GaAs wells, creating a dense quasi-two-dimensional electron gas. The Raman spectra contain a feature associated with the e1→e2 intersubband transition.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 01, 1993
- Source ID
- 10.1063/1.354730
Entities
People
- A. Petrou
- J. Boviatsis
- J. Pamulapati
- L. P. Fu
- Maitreya Dutta
- P. G. Newman
- S. T. Lee
- T. Schmiedel
- W. Y. Yu
Organizations
- United States Army Research Laboratory
- University at Buffalo