Time dependence of radiation-induced generation currents in irradiated InGaAs photodiodes
Abstract
The annealing behavior of the reverse bias current-voltage curves of 1 MeV electron irradiated In0.53Ga0.47As photodiodes has been measured at 300 K. The observed decay is shown to be correlated with the reduction of the E2 peak height with time, as measured by deep level transient spectroscopy. The reverse current is found to decay with a logarithmic time dependence, which can be explained by a model in which the annealing of the E2 defects is controlled by a distribution of thermal energy barriers.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 01, 1993
- Source ID
- 10.1063/1.354812
Entities
People
- G. J. Shaw
- G. P. Summers
- R. J. Walters
- Scott R. Messenger
Organizations
- United States Naval Research Laboratory
- University of Maryland