Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry
Abstract
We report noncontact, optical determination of free-charge carrier mobility, sheet density, and resistivity parameters in epitaxial graphene at room temperature using terahertz and midinfrared ellipsometry and optical-Hall effect measurements. The graphene layers are grown on Si- and C-terminated semi-insulating 6H silicon carbide polar surfaces. Data analysis using classical Drude functions and multilayer modeling render the existence of a p-type channel with different sheet densities and effective mass parameters for the two polar surfaces. The optically obtained parameters are in excellent agreement with results from electrical Hall effect measurements.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 24, 2011
- Source ID
- 10.1063/1.3548543
Entities
People
- A. Boosalis
- C. M. Herzinger
- D. Kurt Gaskill
- J. A. Woollam
- J. L. Tedesco
- Mathias Schubert
- P. Kühne
- T. Hofmann
Organizations
- Army Research Office
- National Science Foundation
- United States Naval Research Laboratory
- University of Nebraska–Lincoln