Thermal oxidation of silicon carbide: A comparison of n-type and p-type doped epitaxial layers
Abstract
The kinetics of wet thermal oxidation of both n-type and p-type doped 6H-SiC epitaxial layers grown on p-type 6H-SiC wafers has been investigated. The oxidation rates are affected significantly by doping concentration. The kinetics of wet thermal oxidation abides by the Deal–Grove model B. E. Deal and A. S. Grove, [J. Appl. Phys. 36, 3770 (1965)]. The linear oxidation rate constant B/A and the parabolic oxidation rate constant B are obtained by fitting the measured data to the Deal–Grove model.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 24, 2011
- Source ID
- 10.1063/1.3549294
Entities
People
- Kenji Okino
- Mehran Mehregany
- Xiao-An Fu
Organizations
- Case Western Reserve University
- Defense Advanced Research Projects Agency
- University of Louisville