Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si (100)
Abstract
We have grown epitaxial strained LaCoO3 on (100)-oriented silicon by molecular beam epitaxy using a relaxed epitaxial SrTiO3 buffer layer. Superconducting quantum interference device magnetization measurements show that, unlike the bulk material, the ground state of the strained LaCoO3 on silicon is ferromagnetic with a TC of 85 K. First principles calculations suggest that a ferromagnetic ground state can be stabilized in LaCoO3 by a sufficiently large biaxial tensile strain with the transition accompanied by a partial untilting of the CoO6 octahedra.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 31, 2011
- Source ID
- 10.1063/1.3549301
Entities
People
- A. A. Demkov
- A. De Lozanne
- A. P. Kirk
- Agham Posadas
- D. J. Smith
- D. Zhernokletov
- Hyeonglim Seo
- Matthew J. Berg
- R. M. Wallace
Organizations
- Arizona State University
- National Science Foundation
- Office of Naval Research
- United States Department of Energy
- University of Texas at Austin
- University of Texas at Dallas