The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity
Abstract
Vertical microcavity surface-emitting lasers employing quantum wells and small aperture buried-oxide current and field confinement are demonstrated with wider mode spacing and faster spontaneous carrier recombination (enhanced Purcell factor), lower threshold current, larger side mode suppression ratio (SMSR), and higher photon density and temperature insensitivity. The result is a microcavity laser that achieves higher microwave modulation bandwidth (f−3dB = 15.8 GHz) at ultra-low power consumption (1.5 mW) with a slope for the modulation current efficiency factor (MCEF) = 17.47 GHz/mA−1/2, as well as a better quality eye diagram in high-speed data transmission. The microwave behavior model for the microcavity laser is used to estimate the enhanced recombination and reduced lifetime.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2011
- Source ID
- 10.1063/1.3553876
Entities
People
- Chunxiang Wu
- Furui Tan
- M. K. Wu
- MengKe Feng
- N. Holonyak
Organizations
- Army Research Office
- University of Illinois Urbana–Champaign