Voltage bias influence on the converse magnetoelectric effect of PZT/terfenol-D/PZT laminates

Abstract

The converse magnetoelectric effect (CME) of a 2-mm-thick Pb(Zr0.52Ti0.48)O3 (PZT)/Tb0.30Dy0.7Fe2 (Terfenol-D)/PZT laminate subjected to an applied dc voltage bias has been investigated. Experimental data demonstrate that the CME coefficient αCME (B/Vac)is highly dependent on the applied voltage bias. In the present work, the voltage bias is shown to increase the magnitude of magnetostriction in the Terfenol-D, which results in an increase in the magnitude and range of piezomagnetic coefficient and αCME values. It is shown that αCME can range from a minimum of 0.4 G/V at a voltage bias of −200 V to a value of 1.65 G/V at a voltage bias of 700 V. This range represents a greater than 400% change in the αCME at a fixed magnetic field bias, the largest change in αCME due to voltage bias yet reported. The expanded range is primarily caused by giant shifts in the piezomagnetic coefficient and not by nonlinearities in the piezoelectric coefficient.

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 15, 2011
Source ID
10.1063/1.3553885

Entities

People

  • Gregory P. Carman
  • Joshua L. Hockel
  • Tao Wu

Organizations

  • Army Research Office
  • University of California

Tags

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics