Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures
Abstract
The free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas are exemplarily determined in the spectral range from 640 GHz to 1 THz in a AlGaN/GaN heterostructure using the optical-Hall effect at room temperature. Complementary midinfrared spectroscopic ellipsometry measurements are performed for analysis of heterostructure constituents layer thickness, phonon mode, and free-charge carrier parameters. The electron effective mass is determined to be (0.22±0.04)m0. The high-frequency sheet density and carrier mobility parameters are in good agreement with results from dc electrical Hall effect measurements, indicative for frequency-independent carrier scattering mechanisms of the two-dimensional carrier distribution.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 28, 2011
- Source ID
- 10.1063/1.3556617
Entities
People
- A. Boosalis
- C. M. Herzinger
- J. A. Woollam
- Junxia Shi
- Lester F. Eastman
- Mathias Schubert
- P. Kühne
- S. Schöche
- T. Hofmann
- W. J. Schaff
Organizations
- Army Research Office
- Cornell University
- National Science Foundation
- University of Nebraska–Lincoln