In situdoping of graphene by exfoliation in a nitrogen ambient
Abstract
We present an in situ method of n-doping graphene by exfoliating in an N-ambient. By exfoliating single-layer graphene in a nitrogen-rich environment, the dopant specie plays an active role in minimizing C–C reconstruction that typically occurs at the moment of defect generation. Employing such in situ methods provides an efficient mechanism of passivating defects produced during graphene growth and transfer, as well as a means of controllably incorporating dopant species into the graphene lattice.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 14, 2011
- Source ID
- 10.1063/1.3562018
Entities
People
- Kevin Brenner
- Raghu Murali
Organizations
- Defense Advanced Research Projects Agency
- Georgia Tech