Field dependent magnetic anisotropy of Ga0.2Fe0.8 thin films
Abstract
Using longitudinal MOKE in combination with a variable strength rotating magnetic field, called the rotational MOKE (ROTMOKE) method, we show that the magnetic anisotropy for a Ga0.2Fe0.8 single crystal film with a thickness of 17 nm, grown on GaAs (001) with a thick ZnSe buffer layer, depends linearly on the strength of the applied magnetic field. The torque moment curves generated using ROTMOKE are well fit with a model that accounts for the uniaxial, cubic, or fourfold anisotropy, as well as additional terms with a linear dependence on the applied magnetic field. The uniaxial and cubic anisotropy fields, taken from both the hard and the easy axis scans, are seen to remain field independent. The field dependent terms are evidence of a large affect of the magnetostriction and its contribution to the effective magnetic anisotropy in GaxFe1−x thin films.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2011
- Source ID
- 10.1063/1.3563122
Entities
People
- A. Mcclure
- C. M. Kuster
- Damon A. Resnick
- P. Rugheimer
- Y. U. Idzerda
Organizations
- Army Research Office
- Carroll University
- Montana State University