Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films
Abstract
Rare earth doping is a standard, yet experimentally poorly understood method to increase the Curie temperature (TC) of the ferromagnetic semiconductor EuO. Here, we report on the charge carrier density (n) and the TC of commonly used 4.2 at. % Gd-doped EuO films grown by molecular-beam epitaxy on (110) oriented YAlO3 substrates at various substrate temperatures (Tsub). Increasing Tsub leads to a decrease in n and TC. For high substrate temperatures the Gd-doping is rendered completely inactive: n and TC drop to the values of undoped EuO.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 07, 2011
- Source ID
- 10.1063/1.3563708
Entities
People
- A. Schmehl
- Alexander J. Melville
- D. E. Shai
- D. G. Schlom
- E. J. Monkman
- J. Mannhart
- Jürgen Schubert
- K. M. Shen
- T. Heeg
- T. Mairoser
- T. Z. Regier
- W. Zander
Organizations
- Air Force Office of Scientific Research
- Cornell University
- German Research Foundation
- National Science Foundation
- University of Augsburg
- University of Saskatchewan